Journal Papers (2019-2020)
1. Low temperature Cu bonding with large tolerance of surface oxidation, H. Ren, F. Mu, S. Shin, L. Liu, G. Zou, T. Suga, AIP Advances,10.1063/1.5097382, May, 2019,9,5,055127-1,055127-7
2. High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces, F . Mu, Z. Cheng, J. Shi, S. Shin, B. Xu, J. Shiomi, S. Graham, T.Suga, ACS Applied Materials & Interfaces,10.1021/acsami.9b10106, Online published.
3. 水素ラジカル処理した銅表面のX線光電子分光法(XPS)による酸化挙動解析,申盛斌, 日暮栄治, 古山洸太, 山本道貴, 須賀唯知,電気学会論文誌Ｅ（センサ・マイクロマシン部門誌）10.1541/ieejsmas.139.38, Feb. 1. 2019,139,2,38,39
4. Comparison of argon and oxygen plasma treatments for ambient room-temperature wafer-scale Au-Au bonding using ultrathin Au films, Michitaka Yamamoto, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Tadatomo Suga, Toshihiro Itoh, Eiji Higurashi, Micromachines,10.3390/mi10020119, Feb. 13. 2019,10,2,119,
5. Growth Behavior of Au Films on SiO2 Film and Direct Transfer for Smoothing Au Surfaces, Michitaka Yamamoto, Takeshi Matsumae, Yuichi Kurashima, Hideki Takagi, Tadatomo Suga, Toshihiro Itoh, and Eiji Higurashi, International Journal of Automation Technology,10.20965/ijat.2019.p0254,March 5. 2019,13,2,254,260
6. 極薄Au薄膜を用いたウェハスケール・大気中常温接合のためのプラズマ処理方法の検討, 山本 道貴, 松前貴司, 倉島 優一, 高木 秀樹, 須賀 唯知, 伊藤 寿浩, 日暮 栄治,電気学会論文誌Ｅ（センサ・マイクロマシン部門10.1541/ieejsmas.139.217, Accepted,139,7,217,218
7. Moir_-Based Alignment Using Centrosymmetric Grating Marks for High-Precision Wafer Bonding, Boyan Huang, Chenxi Wang, Hui Fang, Shicheng Zhou, Tadatomo Suga, Micromachines,10.3390/mi10050339_. 10,5,339,
8. Interfacial Thermal Conductance across Room-Temperature Bonded GaN-Diamond Interfaces for GaN-on-Diamond Devices, Zhe Cheng, Fengwen Mu, Luke Yates, Tadatomo Suga, Samuel Graha, ACS Applied Materials & Interfaces,10.1021/acsami.9b16959_,27-Jan-20.
9. Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor, Fengwen Mu, Yang Xu, Seongbin Shin, Yinghui Wang, Hengyu Xu Haiping Shang, Yechao Sun, Lei Yue, Tatsurou Tsuyuki, Tadatomo Suga, Weibing Wang, Dapeng Chen, Micromachines,10.3390/mi10100635. 10,10,635,
10. Room-temperature pressureless wafer-scale hermetic sealing in air and vacuum using surface activated bonding with ultrathin Au films, Michitaka Yamamoto, Yutaka Kunimune, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Yoshinori Iguchi, Yuki Honda, Tadatomo Suga, Toshihiro Itoh, Eiji Higurashi, Japanese Journal of Applied Physics. 26-Nov-19,59,SB,SBBB01,
11. Enhanced adhesion and anticorrosion of silk fibroin coated biodegradable Mg-Zn-Ca alloy via a two-step plasma activation, Hui Fang, Chenxi Wang, Shicheng Zhou, Zhen Zheng, Tian Lu, Ge Li, Yanhong Tian, Tadatomo Suga. Corrosion Science, 10.1016/j.corsci.2020.108466, 15-Jan-20.
12. Direct bonding of high dielectric oxides for high-performance transistor applications, Jikai Xu, Chenxi Wang, Xiaoliang Ji, Qi An, Yanhong Tian, TadatomoSuga, Scripta Materialia, 10.1016/j.scriptamat.2019.11.055,15-Mar-20,178. 307,312
13. Recycled low-temperature direct bonding of Si/glass and glass/glass chips for detachable micro/nanofluidic devices, Chenxi Wang, Hui Fang, Shicheng Zhou, Xiaoyun Qi, Fanfan Niu, Wei Zhang, Yanhong Tian, Tadatomo Suga, Journal of Materials Science & Technology, 10.1016/j.jmst.2019.11.034,4-Feb-20,46. 156,167
Conference Papers / Presentations (2019/04-2020/03)
1. Integration of GaN-SiC and GaN-diamond by surface activated bonding methods, Mu F., Suga T., International Conference on Electronics Packaging (ICEP 2019). April 17 – 20, 2019, Niigata, Japan.
2. Nano-Cu paste sintering in Pt-catalyzed formic acid vapor for Cu bonding at a low temperature, Mu, F., Ren, H., Shin, S. Masatake, A., Liu, L., Zou, G. Makoto, Y., Suga, T., International Conference on Electronics Packaging (ICEP 2019). April 17 – 20,2019, Niigata, Japan.
3. Low temperature all-Cu bonding via Cu-nanoparticle paste sintering in Pt-catalyzed formic acid vapor, Mu, F., Ren, H., Liu, L., Wang Y., Zou, G., Suga, T. , 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). May 21 – 25,2019, Kanazawa, Japan.
4. GaN-SiC and GaN-diamond integration via room temperature bonding, Mu F., Suga T., 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). May 21 – 25,2019, Kanazawa, Japan.
5. SiC-SiC temporary bonding compatible with rapid thermal annealing at 1000ºC, F. Mu, T. Suga, M. Uomoto, T. Shimatsu, K. Iguchi, H. Nakazawa,2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). May 21 – 25,2019, Kanazawa, Japan.
6. Room temperature SiC wafer bonding using SAB methods, F. Mu, Y. Wang, K. Iguchi, H. Nakazawa, T. Suga,2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). May 21 – 25, 2019, Kanazawa, Japan.
7. The integration of Ga2O3 on SiC at room temperature by surface activated bonding method, Y. Xu, F. Mu, Y. Wang, D. Chen, T. Suga,2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). May 21 – 25, 2019, Kanazawa, Japan.
8. [Keynote] Microsystem Integration and Packaging _ A Chronicle of the Surface Activated Bonding and its Future Outlook, T. Suga, 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). May 21 – 25,2019, Kanazawa, Japan.
9. Temporary SiC-SiC wafer bonding compatible with high temperature annealing, Fengwen Mu, Tadatomo Suga, Miyuki Uomoto, Takehito Shimatsu, The 2019 IEEE 69th Electronic Components and Technology Conference (ECTC-2019). May 28 – May 31, 2019, Las Vegas, USA.
10. Low temperature copper-copper bonding in ambient air using hydrogen radical pretreatment, S.Shin, E. Higurashi, T. Suga, 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). May 21 – 25, 2019, Kanazawa, Japan.
11. Room Temperature Bonding of Quartz Glass using Aluminum Oxide Intermediate Layer, Kai Takeuchi, Fengwen Mu, Yoshiie Matsumoto, and Tadatomo Suga,2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). May 21 – 25, 2019, Kanazawa, Japan.
12. Wafer scale Au-Au surface activated bonding using atmospheric-pressure plasma, Michitaka Yamamoto, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Toshihiro Miyake, Tadatomo Suga, Toshihiro Itoh, Eiji Higurashi,2019 International Conference on Electronics Packaging (ICEP), 10.23919/ICEP.2019.8733602., April 17-20, 2019, Niigata, Japan,361,364
13. Room-temperature pressureless wafer sealing using ultrathin Au films activated by Ar plasma, Michitaka Yamamoto, Yutaka Kunimune, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Tadatomo Suga, Toshihiro Itoh, and Eiji Higurashi, 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D),10.23919/LTB-3D.2019.8735313,May 21-25,2019,Kanazawa, Japan, 62, 62
14. Room Temperature Wafer Bonding with Titanium Thin Films Based on Formation of Ti/Si Amorphous Layers, Eiji Higurashi, Hayato Azuma, Michitaka Yamamoto, Takeshi Matsumae, Yuichi Kurashima, Hideki Takagi, and Tadatomo Suga,2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). May 21-25,2019,Kanazawa, Japan,84,84
15. [invited] Room temperature direct bonding of GaN to Diamond using the surface activated bonding (SAB) method, Tadatomo Suga, Fengwen Mu. 8th Applied Optics and Photonics China, 2019 (AOPC 2019),10.23919/LTB-3D.2019.8735346, July 7-9,2019, Beijing, China.
18. [invited] Permanent and Temporary SiC-SiC Wafer Bonding Using the Surface Activated Bonding (SAB) Method, Tadatomo Suga, Fengwen Mu. The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM-2019). July 7-19, 2019, Beijing, China.
19. 表面活性化手法による SiC, GaN の常温接合の新展開, 須賀唯知, 日本セラミックス協会 セラミックコーティング研究会. Sept. 4-5, 2019, 岐阜市.
20. [invited] Room Temperature Bonding of GaN to Si and Diamond by means of the Surface Activated Bonding (SAB) Method, Tadatomo Suga, Fengwen Mu. The European Materials Research Society (E-MRS) 2019 Fall Meeting. Sept. 16-19,2019, Warsaw, Poland.
21. [invited] Innovative bonding technology for 3D integration, Tadatomo Suga, IEEE International 3D Systems Integration Conference 2019 (3DIC2019). Oct 8-10, 2019, Sendai, Japan.
22. [Keynote] Surface Activated Bonding for GaN-SiC and GaN-diamond, Tadatomo Suga, IMPACT-IAAC 2019. Oct. 24, 2019, Taipei, Taiwan.
23, [Keynote] Chronicle of the Surface Activated Bonding and its Future Outlook, Tadatomo Suga,2 019 Symposium of Micro- and Nano-Metallization Process Technology Alliance. Oct. 25, 2019, Taipei, Taiwan.
24. [invited] 表面活性化による異種材料の常温接合, 須賀唯知, 日本電子材料技術協会 第 56 回秋期講演大会. Nov,. 8, 2019,東京.
25. [invited] 3D and Heterogeneous Integration using the Surface Activated Bonding (SAB) Method, Tadatomo Suga, Fengwen Mu, The 11th International Electronics Cooling Technology Workshop (CTW2019). Nov.28-29, 2019,Ze.
26. Surface activated bonding (SAB) for GaN-diamond integration with high thermal boundary conductance, Tadatomo Suga, Fengwen Mu, WaferBond’19 – Conference on Wafer Bonding for Microsystems, 3D- and Wafer Level Integration. Dec. 3 – 4, 2019, Halle, Germany.
27. （中止）[invited] Room temperature bonding for microsystem integration, Tadatomo Suga, MEMS Engineer Forum (MEF) 2020. April 22-23, 2020, Tokyo, Japan.
28．（中止)［基調講演］常温接合と界面制御, 須賀唯知, 2020年第67回応用物理学会春季学術講演会. March 12-15, 2020, Tokyo, Japan.
29. First Demonstration of Waferscale Heterogeneous Integration of Ga2O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process, Wenhui Xu, Yibo Wang, Tiangui You, Xin Ou, Genquan Han, Haodong Hu, Shibin Zhang, Fengwen Mu, Tadatomo Suga, Yuhao Zhang, Yue Hao, Xi Wang, 2019 IEEE International Electron Devices Meeting (IEDM),10.1109/IEDM19573.2019.8993501, Dec. 7-11, 2019, San Francisco, USA,12.5.1,12.5.4
30. Room-temperature bonding of organic films using ultrathin Au intermediate layers for organic integrated optical devices, Michitaka Yamamoto, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Tadatomo Suga, Toshihiro Itoh, Eiji Higurashi, 2019 International Conference on Optical MEMS and Nanophotonics (OMN), 10.1109/OMN.2019.8925169, July 28 -Aug. 1, 2019, Daejeon, Korea.
31. 異種基板の張り合わせと界面熱抵抗, 須賀唯知, 母鳳文, Zhe Cheng, Samuel Graham, Microwave Workshops & Exhibition (MWE 2019）, Nov. 27-29, 201, Yokohama, Japan, 391 -393
32. Surface activated bonding between GaN and SiC with an ultra-low TBR, Fengwen Mu, Zhe, Cheng, Seongbin Shin, Samuel Graham, Tadatomo Suga, The 9th Asia-Pacific Workshop on Wide Bandgap Semiconductors (APWS 2019), Nov. 10-15, 2019, Okinawa, Japan.